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DATA SHEET
MOS INTEGRATED CIRCUIT
PD16808
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The PD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver stage. By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially improved as compared with conventional driver circuits that use bipolar transistors. Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD.
FEATURES
* Low ON resistance (sum of ON resistors of top and bottom FETS) RON1 = 1.0 TYP. (VM = 5.0 V) RON2 = 1.5 TYP. (VM = 12.0 V) * Low current consumption: IDD = 0.4 mA TYP. * Four input modes independently controlling dual H bridge drivers (with 1- to 2-phase excitation selected) * Motor voltage 12 V/5 V compatible * Compact surface mount package: 20-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
C1H C2L VM1 1A PGND1 2A VDD IN1 IN2 IN3
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
C1L C2H VG 1B PGND2 2B VM2 SEL IN4 DGND
Document No. S12720EJ2V0DS00 (2nd edition) Date Published September 1997 N Printed in Japan
(c)
1997
PD16808
ORDERING INFORMATION
Part Number Package 20-pin plastic SOP (300 mil)
PD16808GS
BLOCK DIAGRAM
0.01 F VDD C1L C1H C2L 0.01 F C2H VG 0.01 F
OSC CIRCUIT
CHARGE PUMP
2 x VDD + VM
VM
VM1 IN1 CONTROL CIRCUIT 1 LEVEL SHIFT 1 "H" BRIDGE 1 1A 1B PGND1 SEL VM2 2A CONTROL CIRCUIT 2 LEVEL SHIFT 2 "H" BRIDGE 2 2B PGND2 +
IN2
IN3
IN4 DGND
Connected in diffusion layer
2
PD16808
FUNCTION TABLE
* With 1- to 2-phase excitation selected (SEL = High)
Excitation Direction ---- H2R H2F ---- H1R <3> <2> H1R H1F <4> <1> H1F ---- H2R H2F ---- IN1 L L L L L L L L H H H H H H H H IN2 L L L L H H H H L L L L H H H H IN3 L L H H L L H H L L H H L L H H IN4 L H L H L H L H L H L H L H L H H1 S S S S R R R R F F F F S S S S H2 S R F S S R F S S R F S S R F S
H1F <4> <1>
H2R
H2F
<3> H1R
<2>
* With 2-phase excitation selected (SEL = Low)
Excitation Direction <1> <2> <3> <4> - F: Forward IN1 H L L H x IN3 H H L L x IN4 x x x x x IN2 H H H H L S: Stop H1 F R R F Stop x: Don't care H2 F F R R
R: Reverse
For the excitation waveform timing chart, refer to APPLICATION CIRCUIT EXAMPLE.
FORWARD VM REVERSE VM STOP VM
ON
OFF
OFF
ON
OFF
OFF
A
B
A
B
A
B
OFF
ON
ON
OFF
OFF
OFF
3
PD16808
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Parameter Supply voltage (motor block) Supply voltage (control block) Power dissipation Symbol VM VDD Pd1 Pd2 Instantaneous H bridge driver current Input voltage Operating temperature range Operation junction temperature Storage temperature range ID (pulse) VIN TA TjMAX. Tstg Rating -0.5 to +15 -0.5 to +7 1.0Note 1 1.25Note 2 1.0Note 2, 3 -0.5 to VDD + 0.5 0 to 60 150 -55 to +125 A V C C C Unit V V W
Notes 1. IC only 2. When mounted on a printed circuit board (100 x 100 x 1 mm, glass epoxy) 3. t 5 ms, Duty 40 %
Pd - TA Characteristics 1.4 When mounted on printed circuid boad 1.2
Average power dissipation Pd (W)
IC only 1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
100
Ambient temperature TA (C)
4
PD16808
RECOMMENDED OPERATING CONDITIONS
Parameter Supply voltage (motor block) Supply voltage (control block) H bridge driver VM = 5.0 V Charge pump capacitance Operating temperature currentNote 1-/2-phase excitation 2-phase excitation C1 to C3 TA 5 0 Symbol VM VDD IDR MIN. 4.0 4.0 TYP. 5.0 5.0 MAX. 13.2 6.0 600 450 20 60 nF C Unit V V mA
Note When mounted on a printed circuit board (100 x 100 x 1 mm, glass epoxy) ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
Parameter OFF VM pin current Symbol IM Conditions VM = 6.0 V, VDD = 6.0 VNote 1 VNote 1 0.4 MIN. TYP. MAX. 1.0 1.0 1.0 1.0 2.0 -0.18 -0.25 35 25 3.0 -0.3 VDD = 5 V, VM = 5 V VDD = 5 V, VM = 12 V Excitation direction <2>, <4>Note 4 Excitation direction <1>, <3> VDD = 5 V, VM = 5 V C1 = C2 = C3 = 10 nF RM = 20 0.2 1.0 1.5 50 65 75 VDD + 0.3 0.8 2.0 3.0 5 10 1.0 5 5 ms V V % k mA Unit
A
mA mA
VM = 13.2 V, VDD = 6.0 VDD pin current Control pin high-level input current Control pin low-level input current Control pin input pull-up resistance Control pin high-level input voltage Control pin low-level input voltage H bridge circuit ON resistanceNote 3 RON relative accuracy VIH VIL RON1 RON2 RIN IIL IDD IIH Note 2 TA = 25 C, VIN = VDD
A
0 TA 60 C, VIN = VDD TA = 25 C, VIN = 0 V 0 TA 60 C, VIN = 0 V TA = 25 C 0 TA 60 C
RON1 RON2
Charge pump circuit (VG) turn-ON time H bridge circuit turn-ON time H bridge circuit turn-OFF time
TONG TONH TOFFH
s s
Notes 1. 2. 3. 4.
Control pins (IN1, IN2, IN3, IN4): low Control pins (IN1, IN2, IN3, IN4): high Sum of ON resistances of top and bottom transistors For the excitation direction, refer to FUNCTION TABLE.
5
PD16808
CHARACTERISTIC CURVES
RON vs. VDD (= VM) Characteristics 3 RM = 20
H bridge ON resistance RON () H bridge ON resistance RON ()
RON vs. VM Characteristics 3 RM = 100
2
2 VDD = 4.5 V VDD = 5.0 V VDD = 5.5 V 1
1
0
4.0
5.0
6.0
0 10
11
12 Motor voltage VM (V)
13
14
Supply voltage VDD (= VM) (V)
RON vs. Tj Characteristics 3 VDD = VM =5.0 V RM = 20
H bridge ON resistance RON ()
2
1
0
50
100
150
Operation junction temperature Tj (C)
6
* Connection with 1-chip FDD LSI PC2100AGF (With 1- to 2-phase excitation selected)
APPLICATION CIRCUIT EXAMPLE
PC2100AGF Stepping Motor Excitation Timing Chart
Step input
Direction
Internal circumference seek
External circumference seek
PH11
PH21
PH31 PH41
0.01 F VDD C1L
0.01 F C2H
0.01 F VG
C1H C2L
OSC CIRCUIT
CHARGE PUMP
2 x VDD + VM
VM
PH11 PH21 PH31 PH41
VM1 IN1 IN2 VDD SEL IN3 IN4 DGND CONTROL CIRCUIT 2 LEVEL SHIFT 2 "H" BRIDGE 2 CONTROL CIRCUIT 1 LEVEL SHIFT 1 "H" BRIDGE 1 1A 1B PGND1 VM2 2A +
PD16808
2B PGND2
PC2100AGF
Connected in diffusion layer
7
8
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
* Connection with 1-chip FDD LSI PC2100AGF (With 2-phase exication selected)
PC2100AGF Stepping Motor Excitation Timing Chart
Step input
Direction PH11 PH21
Internal circumference seek
External circumference seek
0.01 F VDD C1L C1H
0.01 F C2L C2H
0.01 F VG
OSC CIRCUIT
CHARGE PUMP
2 x VDD + VM
VM
VM1
SPF0 IN1 PH11 IN2
1A CONTROL CIRCUIT 1 LEVEL SHIFT 1 "H" BRIDGE 1 1B PGND1
+
PH21
SEL
VM2
IN3
2A CONTROL CIRCUIT 2 LEVEL SHIFT 2 "H" BRIDGE 2 2B PGND2
IN4 DGND
PC2100AGF
Connected in diffusion layer
PD16808
PD16808
20 PIN PLASTIC SOP (300 mil)
20 11 detail of lead end
1 A
10 H
G
P
I
J
F
K
E
C D
NOTE
N M
M
B
L
ITEM A B C D E F G H I J K L M N P
MILLIMETERS 13.00 MAX. 0.78 MAX. 1.27 (T.P.) 0.40 +0.10 -0.05 0.10.1 1.8 MAX. 1.55 7.70.3 5.6 1.1 0.20 +0.10 -0.05 0.60.2 0.12 0.10 3 +7 -3
INCHES 0.512 MAX. 0.031 MAX. 0.050 (T.P.) 0.016 +0.004 -0.003 0.0040.004 0.071 MAX. 0.061 0.3030.012 0.220 0.043 0.008 +0.004 -0.002 0.024 +0.008 -0.009 0.005 0.004 3 +7 -3
Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition.
P20GM-50-300B, C-4
9
PD16808
RECOMMENDED SOLDERING CONDITIONS
It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. Surface mount type For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting Technology Manual (C10535E).
Symbol of Recommended Soldering IR30-00
Soldering Method Infrared reflow
Soldering Conditions Peak package temperature: 230 C, Time: 30 seconds MAX. (210 C MIN.), Number of times: 1, Number of days: NoneNote Peak package temperature: 215 C, Time: 40 seconds MAX. (200 C MIN.), Number of times: 1, Number of days: NoneNote Solder bath temperature: 260 C MAX., Time: 10 seconds MAX., Number of times: 1, Number of days: NoneNote Pin temperature: 300 C MAX., Time: 10 seconds MAX., Number of days: NoneNote
VPS
VP15-00
Wave soldering
WS60-00
Partial heating
-
Note The number of storage days at 25 C, 65 % RH after the dry pack has been opened Caution Do not use two or more soldering methods in combination (except partial heating).
10
PD16808
[MEMO]
11
PD16808
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5
2

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